SSF2112H2 20v dual n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v i d 8 a drain current-continuous@ current-pulsed (note 1) i dm 50 a maximum power dissipation p d 1.25 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal resistance thermal resistance,junction-to-ambient (note 2) r ja 100 /w v dss 20v r ds (on) 10mohm(typ.) i d 8a tssop-8 marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for buttery protection, load switching and general power management ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications. g1 d2 g2 s2 d1 s1 d1 s1 s1 g1 d2 s2 s2 g2 12 3 4 8 7 65 8205a 2112h2
SSF2112H2 20v dual n-channel mosfet www.goodark.com page 2 of 7 rev.1.0 electrical characteristics @t a =25 unless otherwise specified parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250a 20 v zero gate voltage drain current i dss v ds =20v,v gs =0v 1 a gate-body leakage current i gss v gs =10v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a 0.5 0.7 1.2 v v gs =4.5v, i d =4.5a 10 12.5 m drain-source on-state resistance r ds(on) v gs =2.5v, i d =3.5a 13.2 18.5 m forward transconductance g fs v ds =5v,i d =4a 4 s dynamic characteristics (note4) input capacitance c lss 1520 pf output capacitance c oss 229 pf reverse transfer capacitance c rss v ds =8v,v gs =0v, f=800khz 198 pf switching characteristics (note 4) turn-on delay time t d(on) 18.3 ns turn-on rise time t r 4.8 ns turn-off delay time t d(off) 43.5 ns turn-off fall time t f v dd =10v,i d =1a v gs =4v,r gen =10 20 ns total gate charge q g 19 nc gate-source charge q gs 4.2 nc gate-drain charge q gd v ds =10v,i d =4a, v gs =4v 4.9 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =2a 0.67 1.2 v diode forward current (note 2) i s 8 a
SSF2112H2 20v dual n-channel mosfet www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
SSF2112H2 20v dual n-channel mosfet www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics vgs gate-source voltage (v) i d - drain current (a) figure 1: transfer characteristics normalized on-resistance t j -junction temperature( ) figure 2 drain-source on-resistance vsd source-drain voltage (v) i s - reverse drain current (a) figure 3 : source- drain diode forward t j -junction temperature( ) p d power(w) figure 4: power dissipation figure 5: safe operation area
SSF2112H2 20v dual n-channel mosfet www.goodark.com page 5 of 7 rev.1.0 r(t),normalized effective transient thermal impedance square wave pulse duration(sec) figure 6: normalized maximum transient thermal impedance
SSF2112H2 20v dual n-channel mosfet www.goodark.com page 6 of 7 rev.1.0 mechanical data tssop-8 dimensions in millimeters (unit: mm) notes 1. all dimensions are in millimeters. 2. dimensions are inclusive of plating 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
SSF2112H2 20v dual n-channel mosfet www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: 2112h2 package (available) tssop-8 operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/ inner box units/ inner box inner boxes/ carton box units/ carton box tssop-8 3000pcs 2pcs 6000pcs 8pcs 48000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 or 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 or 150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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